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Molecular beam epitaxy (MBE) system

This picture shows a VG V80H MBE system. This MBE system is equipped with in-situ surface analysis facilities (X-ray photoelectron spectroscopy and Auger electron spectroscopy) and is dedicated for growth and characterization of II-VI based semiconductor thin film structures. The current active research areas being carried out in this system include wide-gap photonics, optoelectronics and spintronics.

DEPARTMENT OF PHYSICS