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Field-enhanced Atomic-scale Memristor - Energy-efficient Circuits and Photon Emission
Speaker Dr. Bojun Cheng, ETH Zurich
Date 21 June 2021 (Monday)
Time 11:00 - 12:00
Venue Zoom (online)

The memristors, also known as resistance switching devices, find their application in neuromorphic and in-memory computing, logic circuits, and high-density storage units. Recently, Moore's scaling is slowing down, and the scaling down of memristors into atomic-scale attracts extensive interest. This is because memristors can still operate reliably with the relocation of only a few atoms.

This talk aims to cover the fundamentals and applications of the atomic-scale memristor. First, the effect of field enhancement in the atomic-scale memristors is discussed. The field-enhanced atomic-scale memristors feature desirable properties, such as low leakage, low switching energy, fast switching speed, and low variability. Then, low-power circuits consisting of those memristors and transistors are presented. Finally, the photon emission from the memristive switching process is demonstrated and investigated. The small feature size and ease of fabrication make it ideal as the smallest on-chip photon source.


Dr. Bojun Cheng is a postdoctoral research scientist at the Institute of electromagnetic Fields, ETH Zurich, Switzerland. His current research interests include atomic-scale memristor (ReRAM) and its interaction with light and memristor-based low-power circuits. In 2012 Bojun Cheng received his B.Sc. degree in physics at the University of Science and Technology of China (USTC). In 2015 he got an M.Sc. in electrical engineering at ETH Zurich, Switzerland. In 2021, he received his Ph.D. degree under the guidance of Prof. Juerg Leuthold at ETH Zurich. Since 2018, he has been working at the Center for Single Atom Electronics and Photonics.

To request for meeting link, please write to phweb@ust.hk.